Electron and hole mobilities in silicon as a function of concentration and temperature

1 February 1982

journal article
Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices

Vol. 29 (2), 292-295
https://doi.org/10.1109/t-ed.1982.20698

Abstract

An analytical expression has been derived for the electron and hole mobility in silicon based on both experimental data and modified Brooks-Herring theory of mobility. The resulting expression allows one to obtain electron and hole mobility as a function of concentration up to\sim 10^{20}cm^-3in an extended and continuous temperature range (250-500 K) within ± 13 percent of the reported experimental values.

Keywords

FUNCTION
SILICON
SIM
HOLE MOBILITY
HERRING
PERCENT
BROOKS
3IN

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