High performance and highly reliable novel CMOS devices using accumulation mode multi-gate and fully depleted SOI MOSFETs
- 31 October 2007
- journal article
- Published by Elsevier BV in Microelectronic Engineering
- Vol. 84 (9-10), 2105-2108
- https://doi.org/10.1016/j.mee.2007.04.124
Abstract
No abstract availableKeywords
Funding Information
- Ministry of Education, Culture, Sports, Science and Technology
This publication has 4 references indexed in Scilit:
- New era of silicon technologies due to radical reaction based semiconductor manufacturingJournal of Physics D: Applied Physics, 2005
- 1.5-nm Gate oxide CMOS on [110] surface-oriented Si substrateIEEE Transactions on Electron Devices, 2003
- Total Room Temperature Wet Cleaning for Si Substrate SurfaceJournal of the Electrochemical Society, 1996
- Mobility Anisotropy of Electrons in Inversion Layers on Oxidized Silicon SurfacesPhysical Review B, 1971