High voltage breakdown (1.8 kV) of hydrogenated black diamond field effect transistor
- 14 November 2016
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 109 (20), 203504
- https://doi.org/10.1063/1.4967999
Abstract
We fabricated and characterized black polycrystalline diamond field effect transistors. By implementing a C-H bonded channel with a wide gate-drain length up to 20 μm, a breakdown voltage of 1.8 kV was achieved, which is the highest value reported for a diamond field effect transistor (FET) to date. Several of our devices achieved a breakdown voltage/wide gate-drain length ratio > 100 V/μm. This is comparable to the performance of lateral SiC and GaN FETs. We investigated the effects of voltage stress up to 2.0 kV, and showed that the maximum current density fell to 26% of its initial value of 2.42 mA/mm before the device eventually broke down at 1.1 kV.Funding Information
- Japan Society for the Promotion of Science (26220903)
This publication has 22 references indexed in Scilit:
- 600 V Diamond Junction Field-Effect Transistors Operated at 200$^{\circ}{\rm C}$IEEE Electron Device Letters, 2013
- High Temperature Operation of Boron-Implanted Diamond Field-Effect TransistorsJapanese Journal of Applied Physics, 2010
- 1580-V–40-$\hbox{m}\Omega\cdot \hbox{cm}^{2}$ Double-RESURF MOSFETs on 4H-SiC$(\hbox{000}\bar{\hbox{1}})$IEEE Electron Device Letters, 2009
- Characterization of locally modified diamond surface using Kelvin probe force microscopeSurface Science, 2005
- Ozone-treated channel diamond field-effect transistorsDiamond and Related Materials, 2003
- Black diamond: a new material for active electronic devicesDiamond and Related Materials, 2002
- RF Performance of High Transconductance and High-Channel-Mobility Surface-Channel Polycrystalline Diamond Metal-Insulator-Semiconductor Field-Effect TransistorsJapanese Journal of Applied Physics, 2002
- Electron Affinity of the Bare and Hydrogen Covered Single Crystal Diamond (111) SurfacePhysical Review Letters, 1998
- Hydrogen-terminated diamond surfaces and interfacesSurface Science Reports, 1996
- Diamond devices and electrical propertiesDiamond and Related Materials, 1995