Sintering and Electrical Properties of Titania‐ and Zirconia‐Containing ln2O3‐Sno2(ITO) Ceramics
- 8 March 1994
- journal article
- Published by Wiley in Journal of the American Ceramic Society
- Vol. 77 (3), 843-846
- https://doi.org/10.1111/j.1151-2916.1994.tb05376.x
Abstract
No abstract availableKeywords
This publication has 10 references indexed in Scilit:
- Influence of manufacturing process of indium tin oxide sputtering targets on sputtering behaviorThin Solid Films, 1992
- Influence of the Deposition and Anneal Temperature on the Electrical Properties of Indium Tin OxideJournal of the Electrochemical Society, 1991
- Studies on Evaporated Indium Tin Oxide (ITO)/Silicon Junctions and an Estimation of ITO Work FunctionJournal of the Electrochemical Society, 1991
- Properties of highly conducting ITO films prepared by ion platingApplied Surface Science, 1988
- The influence of substrate temperature and sputtering gas atmosphere on the electrical properties of reactively sputtered indium tin oxide filmsThin Solid Films, 1986
- Properties of tin doped indium oxide thin films prepared by magnetron sputteringJournal of Applied Physics, 1983
- Electrical properties and defect model of tin-doped indium oxide layersApplied Physics A, 1982
- Preparation of conducting and transparent thin films of tin-doped indium oxide by magnetron sputteringApplied Physics Letters, 1980
- The high temperature behavior of In2O3Journal of Solid State Chemistry, 1975
- Optical and Electrical Properties of Tin Oxide FilmsJournal of the Physics Society Japan, 1958