Channel‐Length‐Dependent Field‐Effect Mobility and Carrier Concentration of Reduced Graphene Oxide Thin‐Film Transistors
- 31 May 2010
- Vol. 6 (11), 1210-1215
- https://doi.org/10.1002/smll.200902407
Abstract
No abstract availableKeywords
This publication has 37 references indexed in Scilit:
- Evolution of Electrical, Chemical, and Structural Properties of Transparent and Conducting Chemically Derived Graphene Thin FilmsAdvanced Functional Materials, 2009
- Large-Area Synthesis of High-Quality and Uniform Graphene Films on Copper FoilsScience, 2009
- Chemical methods for the production of graphenesNature Nanotechnology, 2009
- Graphene-Based UltracapacitorsNano Letters, 2008
- Band‐like Transport in Surface‐Functionalized Highly Solution‐Processable Graphene NanosheetsAdvanced Materials, 2008
- Large-area ultrathin films of reduced graphene oxide as a transparent and flexible electronic materialNature Nanotechnology, 2008
- Evaluation of Solution-Processed Reduced Graphene Oxide Films as Transparent ConductorsACS Nano, 2008
- A Chemical Route to Graphene for Device ApplicationsNano Letters, 2007
- The rise of grapheneNature Materials, 2007
- Two-dimensional atomic crystalsProceedings of the National Academy of Sciences of the United States of America, 2005