Wideband 400 W pulsed power GaN HEMT amplifiers
- 1 June 2008
- conference paper
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- No. 0149645X,p. 303-306
- https://doi.org/10.1109/mwsym.2008.4633163
Abstract
We have developed 400 W pulsed output power GaN HEMT amplifiers with 2.9 – 3.5 GHz bandwidth. Operating the amplifier from a 65 V drain supply under pulsed operation with 10% duty cycle and 100μs pulse width obtains an output power in the range of 401 – 446 W over the band with a drain efficiency of 48 – 55%. The amplifier uses AlGaN/GaN HEMTs with a total device periphery of 44.4 mm and advanced source connected field plates for high breakdown voltage. These wideband high power amplifiers are suitable for use in pulsed radar applications.Keywords
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