Stability of HF-etched Si(100) surfaces in oxygen ambient
- 10 December 2001
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 79 (24), 4051-4053
- https://doi.org/10.1063/1.1425461
Abstract
In situ multiple internal reflection infrared absorption spectroscopy of H-passivated silicon surfaces in controlled oxygen environments reveals that direct oxygen incorporation into the surface Si–Si bonds occurs without surface hydrogen removal, in the temperature range of 550–590 K for 1–20 mTorr O 2 pressures. The kinetics of the O 2 insertion process display overall effective activation energies of 1.6 to 1.7 eV and prefactors controlled primarily by Si–H steric hindrance for O 2 to access Si–Si backbonds.Keywords
This publication has 12 references indexed in Scilit:
- Oxidation of H-covered flat and vicinal Si(111)-1×1 surfacesJournal of Vacuum Science & Technology A, 2001
- Initial Oxidation Processes of H-Terminated Si(100) Surfaces Analyzed using a Random Sequential Adsorption ModelJapanese Journal of Applied Physics, 1999
- Hydrogen adsorption and desorption processes on Si(100)Applied Surface Science, 1998
- Initial-induced Oxidation of Si(100)–Physical Review Letters, 1997
- Step relaxation and surface stress at H-terminated vicinal Si(111)Chemical Physics Letters, 1993
- Chemical etching of vicinal Si(111): Dependence of the surface structure and the hydrogen termination on the pH of the etching solutionsThe Journal of Chemical Physics, 1991
- Ideal hydrogen termination of the Si (111) surfaceApplied Physics Letters, 1990
- Infrared spectroscopy of Si(111) and Si(100) surfaces after HF treatment: Hydrogen termination and surface morphologyJournal of Vacuum Science & Technology A, 1989
- Surface infrared spectroscopySurface Science Reports, 1988
- New Ordered Structure for the H-Saturated Si(100) Surface: The (3×1) PhasePhysical Review Letters, 1985