CuInS2 thin-film homojunction solar cells

Abstract

The fabrication and characteristics of n,p‐CuInS₂ thin‐film homojunction solar cells are presented. Dark and light I‐V characteristics are reported for a 0.124‐cm² device with η=3.33%, V_oc=0.41 V, I_sc=2.34 mA, and FF=0.43. A best efficiency of 3.62% is cited. An examination of the forward dark lnJ‐vs‐V characteristics indicates that the recombination‐generation mechanism at the junction dominates the device operation. The spectral characteristics are presented and indicate a maximum near the wavelength (λ=0.8 μ) corresponding to the energy gap of CuInS₂, with a relatively low quantum efficiency (<0.45). The stability and limitations of this photovoltaic device are discussed.