Improved Electron Mobility Higher than 106 cm2/Vs in Selectively Doped GaAs/N-AlGaAs Heterostructures Grown by MBE
- 1 October 1983
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 22 (10A), L609
- https://doi.org/10.1143/jjap.22.l609
Abstract
Electron mobility of quasi-two dimensional electron gas (2DEG) in selectively doped GaAs/N-Al x Ga1-x As (x=0.3) heterostructures grown by MBE was investigated as a function of thickness of an undoped Al x Ga1-x As spacer-layer (0–200 Å) introduced between a Si-doped AlGaAs layer and an undoped GaAs layer, at 77 K and 5 K. Mobility of 2DEG as high as 2,120,000 cm2/Vs at 5 K was achieved with a spacer-layer thickness of 200 Å. This electron mobility is higher than any observed so far in semiconductor materials.Keywords
This publication has 20 references indexed in Scilit:
- Dependence of the Mobility and the Concentration of Two-Dimensional Electron Gas in Selectively Doped GaAs/N-AlxGa1-xAs Heterostructure on the AlAs Mole FractionJapanese Journal of Applied Physics, 1983
- High mobility electrons in selectively doped GaAs/n-AlGaAs heterostructures grown by MBE and their application to high-speed devicesJournal of Crystal Growth, 1982
- Mobility calculation of two-dimensional electron gas in GaAs/AlGaAs heterostructure at 4.2 KElectronics Letters, 1982
- High-speed low-power DCFL using planar two-dimensional electron gas FET technologyElectronics Letters, 1982
- Extremely High Mobility of Two-Dimensional Electron Gas in Selectively Doped GaAs/N-AlGaAs Heterojunction Structures Grown by MBEJapanese Journal of Applied Physics, 1981
- Dependence of electron mobility on spatial separation of electrons and donors in AlxGa1−xAs/GaAs heterostructuresJournal of Applied Physics, 1981
- High mobility GaAs-AlxGa1−xAs single period modulation-doped heterojunctionsElectronics Letters, 1981
- Low-noise two-dimensional electron gas FETElectronics Letters, 1981
- A New Field-Effect Transistor with Selectively Doped GaAs/n-AlxGa1-xAs HeterojunctionsJapanese Journal of Applied Physics, 1980
- Note on polar scattering of conduction electrons in regular crystalsPhysica, 1953