Laser oscillation from quantum states in very thin GaAs−Al0.2Ga0.8As multilayer structures
- 15 April 1975
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 26 (8), 463-465
- https://doi.org/10.1063/1.88211
Abstract
We report optically pumped laser oscillation from multilayer heterostructures consisting of alternating layers of GaAs and Al0.2Ga0.8As. Very thin GaAs layers (50−500 Å) exhibit one−dimensional bound states above the band gap of bulk GaAs. The laser oscillation occurs at energies which are slightly below the exciton associated with the lowest energy n=1 bound state.Keywords
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