Cu3N Thin Film for a New Light Recording Media

Abstract

Copper nitride thin films were prepared by using the ion-assisted deposition in which accelerated nitrogen ions were irradiated during the deposition of copper metal. The degree of nitrification of the film was controlled by changing the ion current density. The reflection coefficient of the prepared copper nitride films decreased with the increase of the ion current density. The reflection coefficient was about 30% at 780 nm wavelength, and it recovered to 70% after the film was heated at 300°C. The preliminary experiment of write-once optical recording of this film was carried out, and the viability of its practical use in new media was confirmed.