Theoretical Study of Mode Transition between 2d-Nucleation and Step Flow in MBE Growth of GaAs
- 1 January 1988
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 27 (1A), L12
- https://doi.org/10.1143/jjap.27.l12
Abstract
The disappearance of RHEED intensity oscillation by increasing growth temperature in GaAs MBE on a stepped surface has been studied theoretically based on the 2d-nucleation and surface diffusion theories. By comparing the present and the published RHEED results, we get the surface diffusion length (λs) and the diffusion coefficient (D s) of Ga atoms on the (100) GaAs surface respectively as λs[cm]=4.0 ×10-8 exp (0.3/k T) and D s[cm2/s]=1.6 ×10-2 exp (-1.1/k T).Keywords
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