GaN epitaxial lateral overgrowth and optical characterization
- 31 August 1998
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 73 (9), 1179-1181
- https://doi.org/10.1063/1.122121
Abstract
We demonstrate the epitaxial lateral overgrowth (ELO) of GaN from narrow stripes with triangular cross sections by atmospheric pressure metal organic chemical vapor deposition, and characterize the optical properties of these stripes at each stage of the growth using spatially resolved cathodoluminescence spectroscopy, wavelength imaging, and line scans. An improvement of the optical quality of the GaN materials grown by the ELO technique is clearly shown by the appearance of a free exciton peak, the enhancement of bandedge emission, and the weakening of the yellow emission.Keywords
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