1.3 μ m InGaAs vertical-cavity surface-emitting lasers with mode filter for single mode operation
- 22 November 2004
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 85 (21), 4851-4853
- https://doi.org/10.1063/1.1823012
Abstract
We report on the performance and analysis of 1.3 μ m range InGaAs ∕ GaAs vertical-cavity surface-emitting lasers(VCSELs) with an integrated mode filter consisting of a patterned silicon layer on the top distributer Bragg reflector. In this way, 1 mW of single mode power is obtained from a device with a wavelength of 1265 nm and a threshold current of 2.6 mA at room temperature. An effective index model is used to extract the internal and external losses of the VCSEL structure and to predict the modal losses with and without mode filter, thereby providing a useful design tool for single mode VCSELs.Keywords
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