Parameter extraction for the PSP MOSFET model by the combination of genetic and Levenberg-Marquardt algorithms
- 1 March 2009
- conference paper
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
Based on the combination of the genetic and Levenberg-Marquardt algorithms, a new method is developed to perform both local and global parameter extraction for the PSP MOSFET model. It has been successfully used to extract parameter sets for a 65-nm technology node. Numerical examples demonstrate its ability to obtain highly accurate model parameter values without excessive computational cost.Keywords
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