RF performance of surface channel diamond FETs with sub-micron gate length
- 1 March 2002
- journal article
- Published by Elsevier BV in Diamond and Related Materials
- Vol. 11 (3-6), 382-386
- https://doi.org/10.1016/s0925-9635(01)00644-6
Abstract
No abstract availableKeywords
This publication has 14 references indexed in Scilit:
- High-frequency performance of diamond field-effect transistorIEEE Electron Device Letters, 2001
- Diamond junction FETs based on δ-doped channelsDiamond and Related Materials, 1999
- Diamond surface-channel FET structure with 200 V breakdown voltageIEEE Electron Device Letters, 1997
- Surface state density distribution of semiconducting diamond films measured from the Al/CaF2/i-diamond metal-insulator-semiconductor diodes and transistorsJournal of Applied Physics, 1997
- First diamond power FET structurePublished by Institute of Electrical and Electronics Engineers (IEEE) ,1997
- Study of the effect of hydrogen on transport properties in chemical vapor deposited diamond films by Hall measurementsApplied Physics Letters, 1996
- Hydrogen-terminated diamond surfaces and interfacesSurface Science Reports, 1996
- Fermi Level Pinning in Metal-Insulator-Diamond StructuresJapanese Journal of Applied Physics, 1995
- Pulse-doped diamond p-channel metal semiconductor field-effect transistorIEEE Electron Device Letters, 1995
- Optimum semiconductors for high-power electronicsIEEE Transactions on Electron Devices, 1989