Unpinned (100) GaAs surfaces in air using photochemistry
- 17 February 1986
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 48 (7), 475-477
- https://doi.org/10.1063/1.96535
Abstract
We have unpinned the Fermi level at the surface of both n- and p-type (100) GaAs in air. Light-induced photochemistry between GaAs and water unpins the surface Fermi level by reducing the surface state density. Excitation photoluminescence spectroscopy shows a substantial decrease in both surface band bending and surface recombination velocity in treated samples, consistent with a greatly reduced surface state density (≂1011 cm−2). Capacitance-voltage measurements on metal-insulator-semiconductor structures corroborate this reduction in surface state density and show that the band bending may be controlled externally, indicating an unpinned Fermi level at the insulator/GaAs interface. We discuss a possible unpinning mechanism.Keywords
This publication has 18 references indexed in Scilit:
- Analysis of electrical and optical properties of insulating film–GaAs interfaces using MESFET-type structuresJournal of Vacuum Science and Technology, 1982
- Problems and prospects of compound semiconductor field-effect transistorsJournal of Vacuum Science and Technology, 1980
- Unified defect model and beyondJournal of Vacuum Science and Technology, 1980
- Photoluminescent properties of GaAs–GaAlAs, GaAs–oxide, and GaAs–ZnS heterojunctionsJournal of Vacuum Science and Technology, 1979
- Dynamic properties of interface-state bands in GaAs anodic MOS systemJournal of Vacuum Science and Technology, 1979
- Interface state band between GaAs and its anodic native oxideThin Solid Films, 1979
- Electrical properties of the gallium arsenide–insulator interfaceJournal of Vacuum Science and Technology, 1978
- Perspectives on III–V compound MIS structuresJournal of Vacuum Science and Technology, 1978
- New structure of enhancement-mode GaAs microwave m.o.s.f.e.t.Electronics Letters, 1978
- Electrical properties of anodic and pyrolytic dielectrics on gallium arsenideJournal of Vacuum Science and Technology, 1977