Time dependence of switching oxide traps
Open Access
- 1 December 1994
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Nuclear Science
- Vol. 41 (6), 1835-1843
- https://doi.org/10.1109/23.340515
Abstract
Metal-oxide semiconductor field-effect transistors (MOSFETs) were irradiated and then annealed under alternating positive and negative bias. The magnitude of the reversible trapped-oxide charge component decayed over the course of several cycles (of 3/spl times/10/sup 3/ s each) in one of two processes studied. The HDL hole trap model is shown to explain these and other recent results.Keywords
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