High-Performance UV–Visible–NIR Broad Spectral Photodetectors Based on One-Dimensional In2Te3 Nanostructures

Abstract

For the first time, high quality In₂Te₃ nanowires were synthesized via a chemical vapor deposition (CVD) method. The synthesized In₂Te₃ nanowires are single crystals grown along the [132] direction with a uniform diameter of around 150 nm and an average length of tens of micrometers. Further, two kinds of photodetectors made by 1D In₂Te₃ nanostructures synthesized by CVD and solvothermal (ST) methods respectively were fabricated. To our best knowledge, this is the first time photoresponse properties of In₂Te₃ nanowire have been studied. The CVD grown nanowire device shows better performance than the ST device, which demonstrates a fast, reversible, and stable photoresponse and also a broad light detection range from 350 nm to 1090 nm, covering the UV–visible–NIR region. The excellent performance of the In₂Te₃ nanowire photodetectors will enable significant advancements of the next-generation photodetection and photosensing applications.