Control of strain relaxation in tensile and compressive oxide thin films
- 31 October 2008
- journal article
- Published by Elsevier BV in Acta Materialia
- Vol. 56 (18), 5312-5321
- https://doi.org/10.1016/j.actamat.2008.07.010
Abstract
No abstract availableKeywords
Funding Information
- National Science Foundation (DMR- 05-20020, DMR-07-05054)
- Materials Research Science and Engineering Center, Harvard University
This publication has 26 references indexed in Scilit:
- Crack patterns in thin filmsJournal of the Mechanics and Physics of Solids, 2000
- Electroceramic materialsActa Materialia, 2000
- Atomistic structure of misfit dislocations in SrZrO3/SrTiO3 interfacesActa Materialia, 1998
- Cracking during Pyrolysis of Oxide Thin Films‐Phenomenology, Mechanisms, and MechanicsJournal of the American Ceramic Society, 1995
- Modeling the Development and Relaxation of Stresses in FilmsAnnual Review of Materials Science, 1995
- Effect of stress along the ab plane on the and of thin filmsPhysical Review B, 1991
- Strain relaxation during the initial stages of growth in Ge/Si(001)Physical Review B, 1991
- Crack Spacing in Brittle Films on Elastic SubstratesJournal of the American Ceramic Society, 1990
- The driving force for glide of a threading dislocation in a strained epitaxial layer on a substrateJournal of the Mechanics and Physics of Solids, 1990
- Crystallographic studies of perovskite-like compounds. II. Rare earth alluminatesActa Crystallographica, 1956