Characteristics of graphene FET directly transformed from a resist pattern through interfacial graphitization of liquid gallium
- 31 August 2011
- journal article
- Published by Elsevier BV in Microelectronic Engineering
- Vol. 88 (8), 2524-2526
- https://doi.org/10.1016/j.mee.2011.01.014
Abstract
No abstract availableKeywords
This publication has 15 references indexed in Scilit:
- Fabrication of Large-Area Graphene Using Liquid Gallium and Its Electrical PropertiesJapanese Journal of Applied Physics, 2010
- Evolution of Graphene Growth on Ni and Cu by Carbon Isotope LabelingNano Letters, 2009
- Large-Area Synthesis of High-Quality and Uniform Graphene Films on Copper FoilsScience, 2009
- Homogeneous large-area graphene layer growth on-SiC(0001)Physical Review B, 2008
- Ultrahigh electron mobility in suspended grapheneSolid State Communications, 2008
- Energy Band-Gap Engineering of Graphene NanoribbonsPhysical Review Letters, 2007
- The structure of suspended graphene sheetsNature, 2007
- Structural and electronic properties of graphite layers grown on SiC(0001)Surface Science, 2006
- Two-dimensional atomic crystalsProceedings of the National Academy of Sciences of the United States of America, 2005
- Electric Field Effect in Atomically Thin Carbon FilmsScience, 2004