The Use of Bismuth(III) Dithiocarbamato Complexes as Precursors for the Low-Pressure MOCVD of Bi2S3
- 1 October 2000
- journal article
- Published by Wiley in Chemical Vapor Deposition
- Vol. 6 (5), 230-232
- https://doi.org/10.1002/1521-3862(200010)6:5<230::aid-cvde230>3.0.co;2-p