Study of oxygen transport in Czochralski growth of silicon
- 1 July 1999
- journal article
- Published by Elsevier BV in Microelectronic Engineering
- Vol. 45 (2-3), 135-147
- https://doi.org/10.1016/s0167-9317(99)00115-x
Abstract
No abstract availableKeywords
This publication has 17 references indexed in Scilit:
- Sensitivity of Oxygen Sensors in Silicon Melt to Temperature FluctuationJournal of the Electrochemical Society, 1997
- Oxygen Solubility in Silicon Melt Measured In Situ by an Electrochemical Solid Ionic SensorJournal of the Electrochemical Society, 1997
- In situ investigation of oxygen distribution and transport in Czochralski silicon melts by electrochemical solid ionic sensorsJournal of Crystal Growth, 1996
- Oxygen transport analysis in Czochralski silicon melt by considering the oxygen evaporation from the melt surfaceJournal of Crystal Growth, 1995
- Development of an Electrochemical Oxygen Sensor for Czochralski Silicon MeltsJournal of the Electrochemical Society, 1994
- Evaporation of Oxygen-Bearing Species from Si Melt and Influence of Sb AdditionJapanese Journal of Applied Physics, 1994
- Oxygen Solubilities in Si Melt:Influence of Sb AdditionJapanese Journal of Applied Physics, 1993
- Application of turbulence modeling to the integrated hydrodynamic thermal-capillary model of Czochralski crystal growth of siliconJournal of Crystal Growth, 1993
- Computer Simulation of Oxygen Segregation in CZ/MCZ Silicon Crystals and Comparison with Experimental ResultsJournal of the Electrochemical Society, 1991
- Oxygen Solubility in Liquid Silicon in Equilibrium with SiO and SiO2Journal of the Electrochemical Society, 1989