2Mb Spin-Transfer Torque RAM (SPRAM) with Bit-by-Bit Bidirectional Current Write and Parallelizing-Direction Current Read
- 1 February 2007
- conference paper
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE International Solid-State Circuits Conference
- No. 01936530,p. 480-617
- https://doi.org/10.1109/isscc.2007.373503
Abstract
A 1.8V 2Mb spin-transfer torque RAM chip using a 0.2mum logic process with an MgO tunneling barrier cell demonstrates the circuit technologies for potential low-power non-volatile RAM, or universal memory. This chip features an array scheme with bit-by-bit bidirectional current write to achieve proper spin-transfer torque writing in 100ns, and parallelizing-direction current reading with a low-voltage bit-line that leads to 40ns access time.Keywords
This publication has 4 references indexed in Scilit:
- Current-Driven Magnetization Switching in CoFeB/MgO/CoFeB Magnetic Tunnel JunctionsJapanese Journal of Applied Physics, 2005
- Dependence of Giant Tunnel Magnetoresistance of Sputtered CoFeB/MgO/CoFeB Magnetic Tunnel Junctions on MgO Barrier Thickness and Annealing TemperatureJapanese Journal of Applied Physics, 2005
- Giant room-temperature magnetoresistance in single-crystal Fe/MgO/Fe magnetic tunnel junctionsNature Materials, 2004
- Giant tunnelling magnetoresistance at room temperature with MgO (100) tunnel barriersNature Materials, 2004