Interface studies of ALD-grown metal oxide insulators on Ge and III–V semiconductors (Invited Paper)
- 30 September 2009
- journal article
- Published by Elsevier BV in Microelectronic Engineering
- Vol. 86 (7-9), 1536-1539
- https://doi.org/10.1016/j.mee.2009.03.081
Abstract
No abstract availableKeywords
This publication has 16 references indexed in Scilit:
- Ge dangling bonds at the (100)Ge/GeO2 interface and the viscoelastic properties of GeO2Applied Physics Letters, 2008
- Germanium-induced stabilization of a very high-k zirconia phase in ZrO2/GeO2 gate stacksApplied Physics Letters, 2008
- Ge-Interface Engineering With Ozone Oxidation for Low Interface-State DensityIEEE Electron Device Letters, 2008
- The effect of dopants on the dielectric constant of HfO2 and ZrO2 from first principlesApplied Physics Letters, 2008
- Chemical Bonding, Interfaces, and Defects in Hafnium Oxide∕Germanium Oxynitride Gate Stacks on Ge(100)Journal of the Electrochemical Society, 2008
- Effective electrical passivation of Ge(100) for high-k gate dielectric layers using germanium oxideApplied Physics Letters, 2007
- Mechanism of germanium plasma nitridationJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 2006
- Experiments in MIS structure based on germanium and improvements of the interfacial propertiesMaterials Chemistry and Physics, 2000
- Unified defect model and beyondJournal of Vacuum Science and Technology, 1980
- Dominant Surface Electronic Properties of SiO2-Passivated Ge Surfaces as a Function of Various Annealing TreatmentsJournal of Applied Physics, 1968