Dielectric Constant of Boron Nitride Films Synthesized by Plasma-Assisted Chemical Vapor Deposition
- 1 November 2000
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 39 (11A), L1101
- https://doi.org/10.1143/jjap.39.l1101
Abstract
Polycrystalline boron nitride (BN) films are synthesized by plasma-assisted chemical vapor deposition using BCl3 and N2 as source gases. X-ray photoelectron spectroscopy (XPS) and Fourier transform infrared absorption (FTIR) measurements are carried out to characterize the BN films. Capacitance–voltage (C–V) characteristics are measured for Au/BN/p-Si samples. The dielectric constant is estimated from the capacitance in the accumulation region and the film thickness. A dielectric constant as low as 2.2 is achieved for the BN film. It is found that incorporation of carbon atoms into BN films is effective in reducing the dielectric constant.Keywords
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