The values of minority carrier diffusion lengths and lifetimes in GaN and their implications for bipolar devices
- 27 January 2000
- journal article
- conference paper
- Published by Elsevier BV in Solid-State Electronics
- Vol. 44 (2), 221-228
- https://doi.org/10.1016/s0038-1101(99)00227-0
Abstract
No abstract availableThis publication has 23 references indexed in Scilit:
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