GeSn-based p-i-n photodiodes with strained active layer on a Si wafer
- 2 December 2013
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 103 (23), 231907
- https://doi.org/10.1063/1.4840135
Abstract
We report an investigation of GeSn-based p-i-n photodiodes with an active GeSn layer that is almost fully strained. The results show that (a) the response of the Ge/GeSn/Ge heterojunction photodiodes is stronger than that of the reference Ge-based photodiodes at photon energies above the 0.8 eV direct bandgap of bulk Ge (μm), and (b) the optical response extends to lower energy regions (1.55–1.80 μm wavelengths) as characterized by the strained GeSn bandgap. A cusp-like spectral characteristic is observed for samples with high Sn contents, which is attributed to the significant strain-induced energy splitting of heavy and light hole bands. This work represents a step forward in developing GeSn-based infrared photodetectors.Keywords
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