Origin of low frequency noise in polycrystalline silicon thin-film transistors
- 1 March 2003
- journal article
- Published by Elsevier BV in Thin Solid Films
- Vol. 427 (1-2), 113-116
- https://doi.org/10.1016/s0040-6090(02)01153-7
Abstract
No abstract availableKeywords
This publication has 9 references indexed in Scilit:
- Model of low frequency noise in polycrystalline silicon thin-film transistorsIEEE Electron Device Letters, 2001
- Dimension scaling of low frequency noise in the drain current of polycrystalline silicon thin-film transistorsJournal of Applied Physics, 1999
- Excimer laser annealing of amorphous and solid-phase-crystallized silicon filmsJournal of Applied Physics, 1999
- Noise performances in polycrystalline silicon thin-film transistors fabricated by excimer laser crystallizationApplied Physics Letters, 1997
- Large 1/f Noise in Polysilicon TFT Loads and its Effects on the Stability of SRAM CellsJapanese Journal of Applied Physics, 1996
- Evidence of carrier number fluctuation as origin of 1/f noise in polycrystalline silicon thin film transistorsApplied Physics Letters, 1995
- On the theory of carrier number fluctuations in MOS devicesSolid-State Electronics, 1989
- Conductivity behavior in polycrystalline semiconductor thin film transistorsJournal of Applied Physics, 1982
- The electrical properties of polycrystalline silicon filmsJournal of Applied Physics, 1975