Current-Driven Phase Oscillation and Domain-Wall Propagation in WxV1-xO2 Nanobeams
- 26 January 2007
- journal article
- research article
- Published by American Chemical Society (ACS) in Nano Letters
- Vol. 7 (2), 363-366
- https://doi.org/10.1021/nl0624768
Abstract
We report the observation of a current-driven metal (M)−insulator (I) phase oscillation in two-terminal devices incorporating individual WxV1-xO2 nanobeams connected to parallel shunt capacitors. The frequency of the phase oscillation reaches above 5 MHz for ∼1 μm long devices. The M−I phase oscillation, which coincides with the charging/discharging of the capacitor, occurs through the axial drift of a single M−I domain wall driven by Joule heating and the Peltier effect.Keywords
This publication has 16 references indexed in Scilit:
- An organic thyristorNature, 2005
- Dynamical Singlets and Correlation-Assisted Peierls Transition inPhysical Review Letters, 2005
- Single-Crystalline Vanadium Dioxide Nanowires with Rectangular Cross SectionsJournal of the American Chemical Society, 2004
- Quantum transport of non-interacting Fermi gas in an optical lattice combined with harmonic trappingNew Journal of Physics, 2004
- Critical Size for Fracture during Solid−Solid Phase TransformationsNano Letters, 2004
- Activation Volumes for Solid-Solid Transformations in NanocrystalsScience, 2001
- A Hominoid Genus from the Early Miocene of UgandaScience, 1997
- Metal-semiconductor domain configurations during switching of VO2single crystalsJournal of Physics C: Solid State Physics, 1976
- Moving boundaries and travelling domains during switching of VO2single crystalsJournal of Physics C: Solid State Physics, 1975
- NEGATIVE RESISTANCE, CONDUCTIVE SWITCHING, AND MEMORY EFFECT IN SILICON-DOPED YTTRIUM-IRON GARNET CRYSTALSApplied Physics Letters, 1970