Signal and Noise Properties of Gallium Arsenide Microwave Field-Effect Transistors
- 1 January 1975
- book chapter
- Published by Elsevier BV
- Vol. 38, 195-265
- https://doi.org/10.1016/s0065-2539(08)61205-6
Abstract
No abstract availableKeywords
This publication has 57 references indexed in Scilit:
- Value of electron diffusion constant in GaAs for high electric fieldApplied Physics Letters, 1974
- Effect of source lead inductance on the noise figure of a GaAs FETProceedings of the IEEE, 1974
- Si and GaAs 0.5μm-gate Schottky-barrier field-effect transistorsElectronics Letters, 1973
- Noise behavior of GaAs field-effect transistors with short gate lengthsIEEE Transactions on Electron Devices, 1972
- Characteristics of the junction-gate field effect transistor with short channel lengthSolid-State Electronics, 1971
- Noise behavior of Schottky barrier gate field-effect transistors at microwave frequenciesIEEE Transactions on Electron Devices, 1971
- Semiconductor impurity analysis from low-frequency noise spectraIEEE Transactions on Electron Devices, 1971
- Growth of Two- and Three-Dimensional Space Charge from Negative Differential ResistivityJournal of Applied Physics, 1968
- Thermal noise in junction-gate field-effect transistorsIEEE Transactions on Electron Devices, 1966
- The Field Effect TransistorBell System Technical Journal, 1955