Electron-irradiation-induced deep level in n-type GaN
- 26 January 1998
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 72 (4), 448-449
- https://doi.org/10.1063/1.120783
Abstract
Deep-level transient spectroscopy measurements of n-type GaN epitaxial layers irradiated with 1-MeV electrons reveal an irradiation-induced electron trap at EC−0.18 eV. The production rate is approximately 0.2 cm−1, lower than the rate of 1 cm−1 found for the N vacancy by Hall-effect studies. The defect trap cannot be firmly identified at this time.Keywords
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