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A meta-stable leakage phenomenon in DRAM charge storage —Variable hold time
Home
Publications
A meta-stable leakage phenomenon in DRAM charge storage —Variable hold time
A meta-stable leakage phenomenon in DRAM charge storage —Variable hold time
DY
D.S. Yaney
D.S. Yaney
CL
C.Y. Lu
C.Y. Lu
RK
R.A. Kohler
R.A. Kohler
MK
M.J. Kelly
M.J. Kelly
JN
J.T. Nelson
J.T. Nelson
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1 January 1987
conference paper
conference paper
Published by
Institute of Electrical and Electronics Engineers (IEEE)
https://doi.org/10.1109/iedm.1987.191425
Abstract
No abstract available
Keywords
TEMPERATURE
SILICON
LEAKAGE CURRENT
DIODES
ROOM TEMPERATURE
TESTING
DECODING
Cited by 19 articles