Effects of Some Additives on Thermoelectric Properties of FeSi2 Thin Films
- 1 February 1991
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 30 (2R)
- https://doi.org/10.1143/jjap.30.331
Abstract
Effects of some additives (V, Cr, Mn, Co, Ni, Pd, Pt) on thermoelectric properties of FeSi2 thin films were studied. V, Cr or Mn-doped FeSi2 films were of p-type semiconductor and Co, Ni, Pd and Pt-doped FeSi2 films of n-type semiconductor. It was indicated that V or Cr are more suitable additives in thermoelectric properties of p-type FeSi2 than Mn and that Pt is superior to other additives in thermoelectric properties of n-type FeSi2.Keywords
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