Fabrication and characterization of GaN/InGaN/AlGaN double heterostructure LEDs and their application in luminescence conversion LEDs
- 6 May 1999
- journal article
- Published by Elsevier BV in Materials Science and Engineering B
- Vol. 59 (1-3), 390-394
- https://doi.org/10.1016/s0921-5107(98)00352-3
Abstract
No abstract availableKeywords
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