Deep Ultraviolet Light-Emitting Diodes
- 24 November 2011
- book chapter
- other
- Published by Springer Science and Business Media LLC in Springer Series in Materials Science
Abstract
No abstract availableThis publication has 46 references indexed in Scilit:
- Internal Quantum Efficiency of Whole-Composition-Range AlGaN Multiquantum WellsApplied Physics Express, 2011
- Improved Efficiency of 255–280 nm AlGaN-Based Light-Emitting DiodesApplied Physics Express, 2010
- Large Chip High Power Deep Ultraviolet Light-Emitting DiodesApplied Physics Express, 2010
- Improvement in Output Power of 280-nm Deep Ultraviolet Light-Emitting Diode by Using AlGaN Multi Quantum WellsApplied Physics Express, 2010
- Deep-Ultraviolet Light-Emitting DiodesIEEE Transactions on Electron Devices, 2009
- Current and optical noise of GaN∕AlGaN light emitting diodesJournal of Applied Physics, 2006
- Light-Emitting DiodesPublished by Cambridge University Press (CUP) ,2006
- An aluminium nitride light-emitting diode with a wavelength of 210 nanometresNature, 2006
- Temperature and compositional dependence of the energy band gap of AlGaN alloysApplied Physics Letters, 2005
- Dislocation effect on light emission efficiency in gallium nitrideApplied Physics Letters, 2002