An SEU resistant 256 K SOI SRAM
- 1 December 1992
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Nuclear Science
- Vol. 39 (6), 2121-2125
- https://doi.org/10.1109/23.211411
Abstract
No abstract availableThis publication has 4 references indexed in Scilit:
- Model for CMOS/SOI single-event vulnerabilityIEEE Transactions on Nuclear Science, 1989
- Transient Radiation Effects in SOI MemoriesIEEE Transactions on Nuclear Science, 1985
- Single-Event Upset (SEU) Model Verification and Threshold Determination Using Heavy Ions in a Bipolar Static RAMIEEE Transactions on Nuclear Science, 1985
- Collection of Charge on Junction Nodes from Ion TracksIEEE Transactions on Nuclear Science, 1982