Effect of the joule heating on the quantum efficiency and choice of thermal conditions for high-power blue InGaN/GaN LEDs
- 1 May 2006
- journal article
- Published by Pleiades Publishing Ltd in Semiconductors
- Vol. 40 (5), 605-610
- https://doi.org/10.1134/s1063782606050162
Abstract
The heat model of a light-emitting diode (LED) with an InGaN/GaN quantum well (QW) in the active region is considered. Effects of the temperature and drive current, as well as of the size and material of the heat sink on the light output and efficiency of blue LEDs are studied. It is shown that, for optimal heat removal, decreasing of the LED efficiency as current increases to 100 mA is related to the effect of electric field on the efficiency of carrier injection into the QW. As current further increases up to 400 mA, the decrease in efficiency is caused by Joule heating. It is shown that the working current of LEDs can be increased by a factor of 5–7 under optimal heat removal conditions. Recommendations are given on the cooling of LEDs in a manner dependent on their power.Keywords
This publication has 8 references indexed in Scilit:
- Junction and carrier temperature measurements in deep-ultraviolet light-emitting diodes using three different methodsApplied Physics Letters, 2005
- Junction–temperature measurement in GaN ultraviolet light-emitting diodes using diode forward voltage methodApplied Physics Letters, 2004
- Degradation and transient currents in III-nitride LEDsPublished by SPIE-Intl Soc Optical Eng ,2003
- Measurement of temperature distribution in multifinger AlGaN/GaN heterostructure field-effect transistors using micro-Raman spectroscopyApplied Physics Letters, 2002
- InGaN-Based Near-Ultraviolet and Blue-Light-Emitting Diodes with High External Quantum Efficiency Using a Patterned Sapphire Substrate and a Mesh ElectrodeJapanese Journal of Applied Physics, 2002
- Illumination with solid state lighting technologyIEEE Journal of Selected Topics in Quantum Electronics, 2002
- In situ temperature measurements via ruby R lines of sapphire substrate based InGaN light emitting diodes during operationJournal of Applied Physics, 2001
- Characteristics of InGaN-Based UV/Blue/Green/Amber/Red Light-Emitting DiodesJapanese Journal of Applied Physics, 1999