Development of high-power diode lasers with beam parameter product below 2 mm×mrad within the BRIDLE project
- 13 March 2015
- conference paper
- conference paper
- Published by SPIE-Intl Soc Optical Eng
- p. 93480D-93480D-11
- https://doi.org/10.1117/12.2077617
Abstract
No abstract availableKeywords
This publication has 9 references indexed in Scilit:
- Narrow Stripe Broad Area Lasers With High Order Distributed Feedback Surface GratingsIEEE Photonics Technology Letters, 2014
- Suppression of Higher-Order Lateral Modes in Broad-Area Diode Lasers by Resonant Anti-GuidingIEEE Journal of Quantum Electronics, 2013
- Efficient High-Power Laser DiodesIEEE Journal of Selected Topics in Quantum Electronics, 2013
- 17-W Near-Diffraction-Limited 970-nm Output From a Tapered Semiconductor Optical AmplifierIEEE Photonics Technology Letters, 2013
- High-Power, High-Efficiency Monolithic Edge-Emitting GaAs-Based Lasers with Narrow Spectral WidthsPublished by Elsevier BV ,2012
- High-Power DBR-Tapered Laser at 980 nm for Single-Path Second Harmonic GenerationIEEE Journal of Selected Topics in Quantum Electronics, 2009
- Nearly diffraction limited 980-nm tapered diode lasers with an output power of 7.7 WIEEE Journal of Selected Topics in Quantum Electronics, 2005
- Laser beam combining for high-power, high-radiance sourcesIEEE Journal of Selected Topics in Quantum Electronics, 2005
- High brightness 735 nm tapered lasers – optimisation of the laser geometryOptical and Quantum Electronics, 2003