The observation of dissociated dislocations in silicon
- 1 October 1970
- journal article
- other
- Published by Informa UK Limited in Philosophical Magazine
- Vol. 22 (178), 853-856
- https://doi.org/10.1080/14786437008220953
Abstract
The ‘weak-beam’ technique of Cockayne, Ray and Whelan (1969) for imaging dislocations in the electron microscope has been applied to dislocations in silicon. These are shown to be dissociated into partial dislocations, the dissociation width corresponding to a stacking-fault energy of about 55 erg cm−2.Keywords
This publication has 4 references indexed in Scilit:
- Investigations of dislocation strain fields using weak beamsPhilosophical Magazine, 1969
- Observations on dislocation nodes in siliconPhilosophical Magazine, 1965
- Stacking Fault Energy in SiliconJournal of Applied Physics, 1962
- Method of preparing Si and Ge specimens for examination by transmission electron microscopyBritish Journal of Applied Physics, 1962