Photoluminescence Associated with Nitrogen in Silicon
- 1 June 1981
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 20 (6), L423
- https://doi.org/10.1143/jjap.20.l423
Abstract
A new photoluminescence line at 1.1223±0.0001 eV has been observed for the first time in nitrogen-doped silicon crystals. This line never appears unless the crystal is intentionally doped with nitrogen. The relative intensity of the line increases with nitrogen concentration. These results show that the luminescence center responsible for the 1.1223-eV line is associated with nitrogen.Keywords
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