Electrical characterization of ferroelectric, paraelectric, and superparaelectric thin films

Abstract

Detailed equivalent circuit models of ferroelectric and high-permittivity dielectric capacitors are required for the development of FeRAM and ultra-dense DRAM devices. This review comprises the frequency dependence of C-V and P-V characteristics, grain size effects, electrode interface effects, as well as reversible and irreversible contributions to the ferroelectric polarization and discusses their impact on the equivalent circuit modeling.