A novel MONOS nonvolatile memory device ensuring 10-year data retention after 10/sup 7/ erase/write cycles
- 1 January 1993
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 40 (11), 2011-2017
- https://doi.org/10.1109/16.239742
Abstract
No abstract availableThis publication has 20 references indexed in Scilit:
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