Three Solid Modifications of Ba[Ga(NH2)4]2: A Soluble Intermediate in Ammonothermal GaN Crystal Growth
- 3 February 2017
- journal article
- research article
- Published by Wiley in European Journal of Inorganic Chemistry
- Vol. 2017 (5), 902-909
- https://doi.org/10.1002/ejic.201601342
Abstract
No abstract availableKeywords
Funding Information
- DFG (FOR1600)
This publication has 36 references indexed in Scilit:
- Technology of Gallium Nitride Crystal GrowthPublished by Springer Science and Business Media LLC ,2010
- Status and Future of High-Power Light-Emitting Diodes for Solid-State LightingJournal of Display Technology, 2007
- Vapor Pressures, Critical Parameters, Boiling Points, and Triple Points of Ammonia and TrideuteroammoniaJournal of Physical and Chemical Reference Data, 2004
- Misfit defect formation in thick GaN layers grown on sapphire by hydride vapor phase epitaxyApplied Physics Letters, 2002
- Growth and applications of Group III-nitridesJournal of Physics D: Applied Physics, 1998
- Degenerate layer at GaN/sapphire interface: Influence on Hall-effect measurementsApplied Physics Letters, 1997
- The Role of Hydrothermal Synthesis in Preparative ChemistryAngewandte Chemie, 1985
- Die Rolle der Hydrothermalsynthese in der präparativen ChemieAngewandte Chemie, 1985
- Ammonothermalsynthese von Magnesium- und BerylliumamidAngewandte Chemie, 1966
- DISPLACEMENT OF METALS FROM SOLUTIONS OF THEIR SALTS BY LESS ELECTROPOSITIVE ELEMENTS I. THE REPLACEMENT OF SODIUM AND POTASSIUM BY MAGNESIUM AND ALUMINUMJournal of the American Chemical Society, 1923