Resistivity and Hall effect of EuSe in fields up to 150 kOe

Abstract
The resistivity ρ(Hext,T) and Hall effect were studied in ten n-type EuSe single-crystal samples with room-temperature carrier concentrations from 4.2 × 1018 to 3.5 × 1019 electrons/cm3. The electrical measurements were performed at temperatures 1.6T300 K and external magnetic fields 0Hext150 kOe, and were supplemented by magnetization and differential susceptibility measurements to aid in the interpretation. The following phenomena were observed: (a) A very large peak in the zero-field resistivity occurred at a temperature Tmax which varied from ∼ 7 to ∼ 13 K, depending on the sample. (b) A negative magnetoresistance was observed for most temperatures and was very large near Tmax. (c) However, in a limited temperature interval well above Tmax, a positive magnetoresistance was observed at low fields (followed by a negative magnetoresistance at higher fields). (d) Below ∼ 3 K, the zero-field resistivity increased rapidly with decreasing T, except for the sample with the highest carrier concentration. (e) The anomalous Hall effect was negligible at temperatures T4.2 K. Much of the data are interpreted in terms of band conduction. The mobility is then limited by spin-disorder scattering and it increases with increasing Hext, resulting in a negative magnetoresistance. This description fails when both TTmax and Hext<1 to 10 kOe. Under these conditions, the very high resistivity is attributed to the localization (trapping) of electrons by the sf (or df) interaction. At temperatures for which the electrons are localized at Hext=0, a field of 1 to 10 kOe delocalizes the electrons and, therefore, leads to band conduction and a much lower resistivity. At higher fields there is a negative magnetoresistance (smaller than at low fields) due to the reduction in spin-disorder scattering of the band electrons. A model for the positive magnetoresistance, which focuses on the spin splitting of the conduction band by a magnetic field, is presented in the following paper.

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