Photoelectron spectroscopy study of systematically varied doping concentrations in an organic semiconductor layer using a molecular p-dopant
- 15 November 2009
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 106 (10), 103711
- https://doi.org/10.1063/1.3259436
Abstract
We investigate the doping behavior of the strongly electron accepting molecule 2,3,5,6-tetrafluoro-7,7,8,8-tetracyanoquinodimethane coevaporated with the host molecule N,N, N ′ , N ′ -tetrakis(4-methoxyphenyl)-benzidine by photoemission spectroscopy and conductivity measurements. Using interface resolved measurements, we compare the alignment on different substrates and investigate the effects of varying doping concentrations on the Fermi level position. We find that at high doping concentrations the Fermi level gets pinned at the exponentially decaying tail of the highest occupied molecular orbital and compare these results with different dopants and host molecules. The measurement of the doping dependent space charge layer thickness yields information on the amount of free charge carriers and thereby the efficiency of the doping.Keywords
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