Densitometric and Electrical Investigation of Boron in Silicon
- 15 March 1955
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 97 (6), 1521-1525
- https://doi.org/10.1103/physrev.97.1521
Abstract
New analytical, x-ray diffraction, precision density, and electrical resistivity studies of boron-doped silicon show that boron resides in the silicon lattice substitutionally.Keywords
This publication has 6 references indexed in Scilit:
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- Hall Mobility of Electrons and Holes in SiliconPhysical Review B, 1954
- Distortion of a Crystal by Point ImperfectionsJournal of Applied Physics, 1954
- Gold as a Donor in SiliconPhysical Review B, 1954
- Segregation of Impurities During the Growth of Germanium and SiliconThe Journal of Physical Chemistry, 1953
- Electrical Properties of Pure Silicon and Silicon Alloys Containing Boron and PhosphorusPhysical Review B, 1949