New calibration method for the determination of the absolute density of CH radicals through laser-induced fluorescence
- 20 July 1995
- journal article
- Published by Optica Publishing Group in Applied Optics
- Vol. 34 (21), 4542-4551
- https://doi.org/10.1364/ao.34.004542
Abstract
Optics InfoBase is the Optical Society's online library for flagship journals, partnered and copublished journals, and recent proceedings from OSA conferences.Keywords
This publication has 29 references indexed in Scilit:
- Influence of the ion energy on the growth and structure of thin hydrocarbon filmsJournal of Applied Physics, 1993
- Ion energy distributions from electron cyclotron resonance methane plasmasDiamond and Related Materials, 1993
- Laser-induced fluorescence measurements on the C2Sigma+-X2IIrtransition of the CH radical produced by a microwave excited process plasmaPlasma Sources Science and Technology, 1992
- Influence of a direct current bias on the energy of ions from an electron cyclotron resonance plasmaJournal of Vacuum Science & Technology A, 1992
- Properties of diamond-like carbonSurface and Coatings Technology, 1992
- Measurement of Absolute Densities and Spatial Distributions of Si and SiH in an RF-Discharge Silane Plasma for the Chemical Vapor Deposition of a-Si:H FilmsJapanese Journal of Applied Physics, 1991
- Spatial profiles of reactive intermediates in rf silane dischargesJournal of Applied Physics, 1989
- Laser diagnostics of a silane plasma—SiH radicals in an a-Si:H chemical vapor deposition systemJournal of Vacuum Science & Technology A, 1986
- Optical diagnostics of low pressure plasmasPublished by Walter de Gruyter GmbH ,1985
- Optical techniques in plasma diagnosticsPure and Applied Chemistry, 1984