Oscillatory Galvanomagnetic Effects in-Type Indium Arsenide
- 15 May 1958
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 110 (4), 880-883
- https://doi.org/10.1103/physrev.110.880
Abstract
The Hall coefficient and the resistivity of -type InAs, measured as a function of magnetic field strength at low temperatures, reveal de Haas-van Alphen type oscillations. The period is in good agreement with theoretical predictions. An electron effective mass of the order of 0.02 is calculated from the field and temperature dependence of the amplitude.
This publication has 6 references indexed in Scilit:
- Galvanomagnetic Effects in-Type Indium AntimonidePhysical Review B, 1957
- Oscillatory Galvanomagnetic Properties of Bismuth Single Crystals in Longitudinal Magnetic FieldsPhysical Review B, 1957
- Determination of Optical Constants and Carrier Effective Mass of SemiconductorsPhysical Review B, 1957
- Effective Masses of Electrons in Indium Arsenide and Indium AntimonidePhysical Review B, 1957
- Some magnetic properties of metals I. General introduction, and properties of large systems of electronsProceedings of the Royal Society of London. Series A - Mathematical and Physical Sciences, 1952
- Diamagnetismus der MetalleThe European Physical Journal A, 1930