Visible-blind ultraviolet photodetectors based on GaN p-n junctions
- 28 September 1995
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 31 (20), 1781-1782
- https://doi.org/10.1049/el:19951190
Abstract
Visible-blind ultraviolet photodetectors based on GaN p-n junctions are reported. These detectors have an abrupt long-wavelength cutoff wavelength at ~370 nm and responsivity values as high as 0.09 A/W at 360 nm. The rise and fall times were measured to be 300 µs at 325 nm.Keywords
This publication has 3 references indexed in Scilit:
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